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? semiconductor components industries, llc, 2017 july, 2018 ? rev. 2 1 publication order number: nxh80t120l2q0s2g/d nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G q0pack module the nxh80t120l2q0s2/p2g is a power module containing a t?type neutral point clamped (npc) three level inverter stage. the integrated field stop trench igbts and fast recovery diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. features ? low switching loss ? low v cesat ? compact 65.9 mm x 32.5 mm x 12 mm package ? thermistor ? options with pre?applied thermal interface material (tim) and without pre?applied tim ? options with solderable pins and press?fit pins typical applications ? solar inverter ? uninterruptable power supplies figure 1. schematic diagram 15,16 2 1 5,14 3,4 76 8,9,10,11 19 20 t1 d1 ntc 13 12 t4 d4 d2 d3 t2 t3 neutral point igbts & diodes half bridge igbts & diodes 17 18 1200v/80a 600v/50a www. onsemi.com ordering information marking diagrams see detailed ordering and shipping information in the dimensions section on page 13 of this data sheet. q0pack case 180ab solderable pins nxh80t120l2q0s2g = specific device code g = pb?free package a = assembly site code t = test site code yyww = year and work week code nxh80t120l2q0s2g atyyww pin assignments 12 13 14 15 16 17 18 19 20 1 2 3 4 5 6 7 11 10 9 8 NXH80T120L2Q0P2G atyyww q0pack case 180aa press?fit pins
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 2 table 1. maximum ratings rating symbol value unit half bridge igbt collector?emitter voltage v ces 1200 v gate?emitter voltage v ge 20 v continuous collector current @ t h = 80 c (t j = 175 c) i c 67 a pulsed collector current (t j = 175 c) i cpulse 201 a maximum power dissipation @ t h = 80 c (t j = 175 c) p tot 158 w short circuit withstand time @ v ge = 15 v, v ce = 600 v, t j 150 c t sc 5 s minimum operating junction temperature t jmin ?40 c maximum operating junction temperature t jmax 150 c neutral point igbt collector?emitter voltage v ces 600 v gate?emitter voltage v ge 20 v continuous collector current @ t h = 80 c (t j = 175 c) i c 49 a pulsed collector current (t j = 175 c) i cpulse 147 a maximum power dissipation @ t h = 80 c (t j = 175 c) p tot 86 w short circuit withstand time @ v ge = 15 v, v ce = 400 v, t j 150 c t sc 5 s minimum operating junction temperature t jmin ?40 c maximum operating junction temperature t jmax 150 c half bridge diode peak repetitive reverse voltage v rrm 1200 v continuous forward current @ t h = 80 c (t j = 175 c) i f 28 a repetitive peak forward current (t j = 175 c, t p limited by t jmax ) i frm 84 a maximum power dissipation @ t h = 80 c (t j = 175 c) p tot 73 w minimum operating junction temperature t jmin ?40 c maximum operating junction temperature t jmax 150 c neutral point diode peak repetitive reverse voltage v rrm 600 v continuous forward current @ t h = 80 c (t j = 175 c) i f 33 a repetitive peak forward current (t j = 175 c, t p limited by t jmax ) i frm 99 a maximum power dissipation @ t h = 80 c (t j = 175 c) p tot 63 w minimum operating junction temperature t jmin ?40 c maximum operating junction temperature t jmax 150 c thermal properties storage temperature range t stg ?40 to 125 c insulation properties isolation test voltage, t = 1 sec, 60 hz v is 3000 v rms creepage distance 12.7 mm stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. refer to electrical characteristics, recommended operating ranges and/or application information for safe operating parameters. table 2. recommended operating ranges rating symbol min max unit module operating junction temperature t j ?40 150 c functional operation above the stresses listed in the recommended operating ranges is not implied. extended exposure to stresse s beyond the recommended operating ranges limits may affect device reliability.
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 3 table 3. electrical characteristics t j = 25 c unless otherwise noted parameter test conditions symbol min typ max unit half bridge igbt characteristics collector?emitter cutoff current v ge = 0 v, v ce = 1200 v i ces ? ? 300 a collector?emitter saturation voltage v ge = 15 v, i c = 80 a, t j = 25 c v ce(sat ) ? 2.05 2.85 v v ge = 15 v, i c = 80 a, t j = 150 c ? 2.10 ? gate?emitter threshold voltage v ge = v ce , i c = 1.5 ma v ge(th) ? 5.45 6.4 v gate leakage current v ge = 20 v, v ce = 0 v i ges ? ? 300 na turn?on delay time t j = 25 c v ce = 350 v, i c = 60 a v ge = 15v, r g = 4.7 t d(on) ? 61 ? ns rise time t r ? 28 ? turn?off delay time t d(off) ? 205 ? fall time t f ? 41 ? turn?on switching loss per pulse e on ? 550 ? j turn off switching loss per pulse e off ? 1100 ? turn?on delay time t j = 125 c v ce = 350 v, i c = 60 a v ge = 15 v, r g = 4.7 t d(on) ? 58 ? ns rise time t r ? 30 ? turn?off delay time t d(off) ? 230 ? fall time t f ? 63 ? turn?on switching loss per pulse e on ? 720 ? j turn off switching loss per pulse e off ? 1700 ? input capacitance v ce = 20 v, v ge = 0 v, f = 10 khz c ies ? 19400 ? pf output capacitance c oes ? 400 ? reverse transfer capacitance c res ? 340 ? total gate charge v ce = 600 v, i c = 80 a, v ge = +15 v q g ? 800 ? nc thermal resistance ? chip?to?heatsink thermal grease, thickness = 76 m 2%, = 2.9 w/mk r thjh ? 0.60 ? c/w neutral point diode characteristics diode forward voltage i f = 60 a, t j = 25 c v f ? 1.7 2.2 v i f = 60 a, t j = 150 c ? 1.6 ? reverse recovery time t j = 25 c v ce = 350 v, i c = 60 a v ge = 15 v, r g = 4.7 t rr ? 39 ? ns reverse recovery charge q rr ? 1.1 ? c peak reverse recovery current i rrm ? 48 ? a peak rate of fall of recovery current di/dt ? 3400 ? a/ s reverse recovery energy e rr ? 400 ? j reverse recovery time t j = 125 c v ce = 350 v, i c = 60 a v ge = 15 v, r g = 4.7 t rr ? 78 ? ns reverse recovery charge q rr ? 2.0 ? c peak reverse recovery current i rrm ? 59 ? a peak rate of fall of recovery current di/dt ? 1600 ? a/ s reverse recovery energy e rr ? 550 ? j thermal resistance ? chip?to?heatsink thermal grease, thickness = 76 m 2%, = 2.9 w/mk r thjh ? 1.50 ? c/w neutral point igbt characteristics collector?emitter cutoff current v ge = 0 v, v ce = 600 v i ces ? ? 200 a collector?emitter saturation voltage v ge = 15 v, i c = 50 a, t j = 25 c v ce(sat ) ? 1.40 1.75 v v ge = 15 v, i c = 50 a, t j = 150 c ? 1.50 ? gate?emitter threshold voltage v ge = v ce , i c = 1.2 ma v ge(th) ? 5.45 6.4 v gate leakage current v ge = 20 v, v ce = 0 v i ges ? ? 200 na
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 4 table 3. electrical characteristics t j = 25 c unless otherwise noted parameter unit max typ min symbol test conditions neutral point igbt characteristics turn?on delay time t j = 25 c v ce = 350 v, i c = 60 a v ge = 15 v, r g = 4.7 t d(on) ? 30 ? ns rise time t r ? 19 ? turn?off delay time t d(off) ? 110 ? fall time t f ? 23 ? turn?on switching loss per pulse e on ? 800 ? j turn off switching loss per pulse e off ? 480 ? turn?on delay time t j = 125 c v ce = 350 v, i c = 60 a v ge = 15 v, r g = 4.7 t d(on) ? 32 ? ns rise time t r ? 18 ? turn?off delay time t d(off) ? 120 ? fall time t f ? 35 ? turn?on switching loss per pulse e on ? 1100 ? j turn off switching loss per pulse e off ? 880 ? input capacitance v ce = 20 v, v ge = 0 v, f = 10 khz c ies ? 9400 ? pf output capacitance c oes ? 280 ? reverse transfer capacitance c res ? 250 ? total gate charge v ce = 480 v, i c = 50 a, v ge = +15 v q g ? 395 ? nc thermal resistance ? chip?to?heatsink thermal grease, thickness = 76 m 2%, = 2.9 w/mk r thjh ? 1.10 ? c/w half bridge diode characteristics diode forward voltage i f = 40 a, t j = 25 c v f ? 2.11 3.10 v i f = 40 a, t j = 150 c ? 1.50 ? reverse recovery time t j = 25 c v ce = 350 v, i c = 60 a v ge = 15 v, r g = 4.7 t rr ? 45 ? ns reverse recovery charge q rr ? 2.7 ? c peak reverse recovery current i rrm ? 110 ? a peak rate of fall of recovery current di/dt ? 7100 ? a/ s reverse recovery energy e rr ? 1000 ? j reverse recovery time t j = 125 c v ce = 350 v, i c = 60 a v ge = 15 v, r g = 4.7 t rr ? 185 ? ns reverse recovery charge q rr ? 6 ? c peak reverse recovery current i rrm ? 150 ? a peak rate of fall of recovery current di/dt ? 5900 ? a/ s reverse recovery energy e rr ? 1900 ? j thermal resistance ? chip?to?heatsink thermal grease, thickness = 76 m 2%, = 2.9 w/mk r thjh ? 1.30 ? c/w thermistor characteristics nominal resistance t = 25 c r 25 ? 22 ? k nominal resistance t = 100 c r 100 ? 1486 ? deviation of r25 r/r ?5 ? 5 % power dissipation p d ? 200 ? mw power dissipation constant ? 2 ? mw/k b?value b(25/50), tolerance 3% ? 3950 ? k b?value b(25/100), tolerance 3% ? 3998 ? k product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 5 typical characteristics ? half bridge igbt and neutral point diode figure 2. typical output characteristics figure 3. typical output characteristics v ce , collector?emitter voltage (v) 4 25 1 0 0 50 100 200 250 300 figure 4. typical transfer characteristics figure 5. diode forward characteristics v ge , gate?emitter voltage (v) v f , forward voltage (v) 15 12 9 6 3 0 0 20 60 100 140 2.5 2.0 1.5 1.0 0.5 0 i c , collector current (a) i c , collector current (a) i f , forward current 150 t j = 25 c v ce , collector?emitter voltage (v) 5 3 2 1 0 0 50 100 200 250 300 i c , collector current (a) 150 80 180 t j = 150 c t j = 25 c t j = 150 c t j = 25 c 0 10 20 40 50 60 90 100 30 70 3 4 t j = 150 c v ge = 20 v to 13 v figure 6. typical turn on loss vs. ic figure 7. typical turn off loss vs. ic 11 v 10 v 9 v 8 v 7 v 11 v 10 v 9 v 8 v 7 v 40 120 160 80 v ge = 20 v to 13 v
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 6 typical characteristics ? half bridge igbt and neutral point diode figure 8. typical on switching times vs. ic figure 9. typical off switching times vs. ic figure 10. typical on rise times vs. ic figure 11. typical off fall times vs. ic figure 12. typical reverse recovery time vs. ic figure 13. typical reverse recovery charge vs. ic
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 7 typical characteristics ? half bridge igbt and neutral point diode figure 14. typical reverse recovery peak current vs. ic figure 15. typical diode current slope vs. ic figure 16. typical reverse recovery energy vs. ic figure 17. gate voltage vs. gate charge q g , gate charge (nc) 1000 800 600 400 200 0 0 2 4 6 8 12 14 16 v ge , gate voltage (v) 10 v ce = 600 v i c = 80 a
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 8 typical characteristics ? half bridge igbt and neutral point diode figure 18. igbt transient thermal impedance pulse on time (s) 10 0.1 0.01 0.001 0.0001 0.00001 0.001 0.01 0.1 1 duty cycle peak response ( c/w) 1 single pulse 50% 20% 10% 5% 2% 1% figure 19. diode transient thermal impedance pulse on time (s) 10 0.1 0.01 0.001 0.0001 0.00001 0.01 0.1 1 duty cycle peak response ( c/w) 1 single pulse 50% 20% 10% 5% 2% 1% 10
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 9 typical characteristics ? neutral point igbt and half bridge diode figure 20. typical output characteristics figure 21. typical output characteristics v ce , collector?emitter voltage (v) 4 25 1 0 0 50 100 200 250 300 figure 22. typical transfer characteristics figure 23. diode forward characteristics v ge , gate?emitter voltage (v) v f , forward voltage (v) 15 12 9 6 3 0 0 20 60 100 140 3.0 2.0 1.5 1.0 0.5 0 i c , collector current (a) i c , collector current (a) i f , forward current 150 t j = 25 c v ge = 20 v to 15 v v ce , collector?emitter voltage (v) 5 3 2 1 0 0 50 100 200 250 300 i c , collector current (a) 150 80 180 t j = 150 c t j = 25 c t j = 150 c t j = 25 c 0 10 20 40 50 60 90 100 30 70 3 4 t j = 150 c v ge = 20 v to 17 v figure 24. typical turn on loss vs. ic figure 25. typical turn off loss vs. ic 11 v 10 v 9 v 8 v 7 v 11 v 10 v 9 v 13 v 8 v 40 120 160 80 13 v 7 v 15 v 2.5
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 10 typical characteristics ? neutral point igbt and half bridge diode figure 26. typical on switching times vs. ic figure 27. typical off switching times vs. ic figure 28. typical on rise times vs. ic figure 29. typical off fall times vs. ic figure 30. typical reverse recovery time vs. ic figure 31. typical reverse recovery charge vs. ic
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 11 typical characteristics ? neutral point igbt and half bridge diode figure 32. typical reverse recovery peak current vs. ic figure 33. typical diode current slope vs. ic figure 34. typical reverse recovery energy vs. ic figure 35. gate voltage vs. gate charge q g , gate charge (nc) 1000 800 600 400 200 0 0 2 4 6 8 12 14 16 v ge , gate voltage (v) 10 v ce = 480 v i c = 50 a
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 12 typical characteristics ? neutral point igbt and half bridge diode figure 36. igbt transient thermal impedance pulse on time (s) 10 0.1 0.01 0.001 0.0001 0.00001 0.001 0.01 0.1 10 duty cycle peak response ( c/w) 1 single pulse 50% 20% 10% 5% 2% 1% figure 37. diode transient thermal impedance pulse on time (s) 10 0.1 0.01 0.001 0.0001 0.00001 0.01 0.1 1 duty cycle peak response ( c/w) 1 single pulse 50% 20% 10% 5% 2% 1% 10 1
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 13 typical characteristics ? thermistor figure 38. thermistor characteristics temperature ( c) 125 105 85 65 45 25 0 4k 8k 12k 16k 20k 24k resistance ( ) ordering information orderable part number marking package shipping NXH80T120L2Q0P2G NXH80T120L2Q0P2G q0pack ? case 180aa (pb?free and halide?free) 24 units / blister tray nxh80t120l2q0s2g nxh80t120l2q0s2g q0pack ? case 180ab (pb?free and halide?free) 24 units / blister tray nxh80t120l2q0s2tg nxh80t120l2q0s2tg q0pack ? case 180ab with pre?applied thermal interface material (tim) (pb?free and halide?free) 24 units / blister tray
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 14 package dimensions pim20, 55x32.5 / q0pack case 180aa issue c
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 15 package dimensions pim20, 55x32.5 / q0pack case 180ab issue d
nxh80t120l2q0s2g/s2tg, NXH80T120L2Q0P2G www. onsemi.com 16 package dimensions pim20, 55x32.5 / q0pack case 180ab issue d on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 nxh80t120l2q0s2g/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?

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